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| ADVANCE TECHNICAL INFORMATION Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXTC 13N50 VDSS = 500 V ID25 = 12 A RDS(on) = 0.4 ISOPLUS 220TM Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Weight 1.6 mm (0.062 in.) from case for 10 s Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Maximum Ratings 500 500 20 30 12 48 13 18 5 140 -55 ... +150 150 -55 ... +150 300 3 V V V V A A A mJ V/ns W C C C C g l l l l G D S G = Gate, S = Source * Patent pending Isolated back surface* D = Drain, Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Applications l Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2 4 100 TJ = 25C TJ = 125C 200 1 0.4 V V l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 2.5 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V V GS = 10 V, ID = IT Notes 1, 2 l l DC-DC converters Batterychargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages nA A mA l l l l Easy assembly: no screws or isolation foils required Space savings High power density Low collector capacitance to ground (low EMI) (c) 2001 IXYS All rights reserved 98823 (05/01) IXTC 13N50 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 7.5 9.0 2800 V GS = 0 V, VDS = 25 V, f = 1 MHz 300 70 18 V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25, RG = 4.7 (External) 27 32 110 V GS = 10 V, VDS = 0.5 VDSS, ID = IT 15 40 30 40 60 120 25 50 0.90 0.30 S pF pF pF ns ns ns ns nC nC nC K/W K/W ISOPLUS220 OUTLINE gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK V DS = 10 V; ID = 0; IT Notes 1, 2 76 100 Source-Drain Diode Symbol IS ISM VSD trr Test Conditions V GS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 13 52 1.5 600 ns A A V Note: All terminals are solder plated. 1 - Gate 2 - Drain 3 - Source Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 IF = IS -di/dt = 100 A/s, VR = 100 V Note: 1. Pulse test, t 300 s, duty cycle d 2 % IT = 6.5A 2. IT test current: 3. See IXTH12N50A data sheet for characteristic curves. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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